SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg135, 2000)

Citation
Rm. Sidek et al., SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg135, 2000), SEMIC SCI T, 15(4), 2000, pp. 423-423
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
4
Year of publication
2000
Pages
423 - 423
Database
ISI
SICI code
0268-1242(200004)15:4<423:SCFUSM>2.0.ZU;2-4