The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

Authors
Aleksandrov, OV Zakhar'in, AO Sobolev, NA Nikolaev, YA
Citation
Ov. Aleksandrov et al., The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium, SEMICONDUCT, 34(5), 2000, pp. 510-513
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
5
Year of publication
2000
Pages
510 - 513
Database
ISI
SICI code
1063-7826(2000)34:5<510:TIOEII>2.0.ZU;2-I
Abstract
The influence of the additional implantation of electrically inactive impur ities of carbon, oxygen, nitrogen, and fluorine on the formation of donor c enters in silicon implanted with erbium was studied. It is shown that addit ional implantation brings about an increase in the concentration of donor c enters formed during anneals. Variation in the concentration of donor cente rs depends on the type of introduced impurity. The results indicate that el ectrically inactive impurities are involved in the formation of donor cente rs. (C) 2000 MAIK "Nauka/Interperiodica".