Effect of diffusion length and surface recombination on the polarization quantum efficiency of anisotropic crystals

The formulas were derived and numerical analysis was carried out of the dep endences of the polarization quantum efficiency Q(p) and polarization photo current difference Delta i in a homogeneous anisotropic crystal on the diff usion length L and surface recombination rate s(1). The polarization photoc onductivity was considered in the region of both weak and strong optical ab sorption. The trends of Q(p)(L) and Q(p)(s(1)) were shown to move in opposi te directions. These curves are descending for small absorption factors alp ha and ascending for high alpha. The limiting cases of zero, small, and hig h surface recombination rates were considered for Q(p)(L). The dependences were analyzed using the typical parameters of II-IV-V-2 ternary diamond-lik e semiconductors. (C) 2000 MAIK "Nauka/Interperiodica".