Photosensitivity of thin-film structures based on (CuInSe2)(x)(2ZnSe)(1-x)solid solutions

Polycrystalline (CuInSe2)(x)(2ZnSe)(1 - x) films (x = 0.6-1.0) with p-type conductivity and a thickness of 0.5-0.9 mu m were obtained by pulsed laser evaporation. It is shown that a chalcopyrite-sphalerite transition occurs i n the above system for x = 0.7. The obtained films were used to fabricate t he photosensitive structure of the In/p-(CuInSe2)(x)(2ZnSe)(1 - x) and InSe (GaSe)/(CuInSe2)(x)(2ZnSe)(1 - x) types. Spectral dependences of photovolta ic-conversion quantum efficiency were studied, and the photosensitivity of the structures in relation to the type of energy barrier and the compositio n was analyzed. It is concluded that the structures under consideration can be used as broadband photovoltaic converters. (C) 2000 MAIK "Nauka/Interpe riodica".