Zero-phonon and dipole Gamma-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field

Citation
Vy. Aleshkin et Aa. Andronov, Zero-phonon and dipole Gamma-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field, SEMICONDUCT, 34(5), 2000, pp. 575-582
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
5
Year of publication
2000
Pages
575 - 582
Database
ISI
SICI code
1063-7826(2000)34:5<575:ZADGET>2.0.ZU;2-Q
Abstract
The probabilities of zero-phonon and dipole electron transitions between th e Gamma and X subbands in a GaAs/AlAs quantum-well heterostructure subjecte d to a high longitudinal electric field are calculated. It is shown that th e electric field significantly affects the probabilities of both the zero-p honon and the direct dipole Gamma-X transitions. In addition, the electric field changes the spectral dependence of the Gamma-X intersubband light-abs orption coefficient; i.e., an intersubband analogue of the Franz-Keldysh ef fect takes place. (C) 2000 MAIK "Nauka/Interperiodica".