A method for modulation of the charge-carrier mobility in a semiconductor

Authors
Novikov, VV Vardanyan, RR Pakhomov, EE
Citation
Vv. Novikov et al., A method for modulation of the charge-carrier mobility in a semiconductor, SEMICONDUCT, 34(5), 2000, pp. 606-608
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
5
Year of publication
2000
Pages
606 - 608
Database
ISI
SICI code
1063-7826(2000)34:5<606:AMFMOT>2.0.ZU;2-4
Abstract
A new method for modulating the mobility of the majority and minority charg e carriers in silicon was studied. It is shown that, under the effect of lo cal avalanche breakdown of a p-n junction, the charge-carrier mobility in t he bulk of the semiconductor increases or decreases, depending on the orien tation of the p-n junction subjected to breakdown in relation to the direct ion of motion of the charge carriers. (C) 2000 MAIK "Nauka/Interperiodica".