High-pressure Raman scattering from GaPO4

Authors
Peters, MJ Grimsditch, M Polian, A
Citation
Mj. Peters et al., High-pressure Raman scattering from GaPO4, SOL ST COMM, 114(6), 2000, pp. 335-340
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
114
Issue
6
Year of publication
2000
Pages
335 - 340
Database
ISI
SICI code
0038-1098(2000)114:6<335:HRSFG>2.0.ZU;2-2
Abstract
The pressure dependence of the phonons in GaPO4 has been investigated up to 18 GPa using Raman spectroscopy. The existence of sharp Raman lines above the phase transition at approximately 11 GPa is a clear indication that the high-pressure phase is crystalline and not amorphous. Two phonons in the l ow-pressure phase exhibit soft mode behavior. (C) 2000 Elsevier Science Ltd . All rights reserved.