A test of the Fokker-Planck approach for the description of semiconductor transport properties

We apply the Fokker-Planck approach (FPA), where electronic transport is mo deled as a drift-diffusion process in energy space, in the calculation of t ransport properties of bulk Si for a moderately high electric field along t he [1 1 1] direction. The main goal is to test the FPA by comparing the exp erimental and Monte Carlo data with the FPA results for a well-known semico nductor. As a consequence, a reliable basis for the discussion of the valid ity and limitations of the FPA would be provided in a realistic model of a well-known semiconductor. (C) 2000 Elsevier Science Ltd. All rights reserve d.