DC-heating-induced antiband formation and subsequent step wandering on Si(111) studied by in-situ REM

Direct current fed through a Si crystal with (111) vicinal surfaces induces step bunching and wandering which depend on the temperature and the curren t direction. In the present report in-situ reflection electron microscope s tudies of antiband formation and the growth of step wandering are presented together with supplemental observations by scanning electron microscopy an d optical microscopy. Observations were for the temperature range (about 10 00-1180 degrees C) where the step-down current induces step wandering and t he step-up current induces step bunching and antiband formation and subsequ ent step wandering. An important role of antiband formation for step wander ing in the step-up current regions is presented.