Domain growth of the DAS structure on a quenched Si(111) surface studied by STM

Authors
Shimada, W Tochihara, H Sato, T Iwatsuki, M
Citation
W. Shimada et al., Domain growth of the DAS structure on a quenched Si(111) surface studied by STM, SURF REV L, 6(6), 1999, pp. 995-1001
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SURFACE REVIEW AND LETTERS
ISSN journal
0218625X → ACNP
Volume
6
Issue
6
Year of publication
1999
Pages
995 - 1001
Database
ISI
SICI code
0218-625X(199912)6:6<995:DGOTDS>2.0.ZU;2-7
Abstract
We continuously observed the growth of the dimer-adatom-stacking-fault (DAS ) domain, in unreconstructed regions remaining after quenching a Si(111) su rface to 370-380 degrees C, by using scanning tunneling microscopy. It was observed that a single faulted (F) half of the 9 x 9 unit cell of the DAS s tructure grows to a small 9 x 9 DAS domain. Continuous measurements showed that new F-halves are created sharing corner holes with existing F-halves. The creation of new isolated F-halves was very seldom at 370-380 degrees C, and the region of the DAS structure was grown by expanding the area of the existing DAS domains.