Optical second-harmonic phase spectroscopy of the Si(111)-SiO2 interface

Authors
Aktsipetrov, OA Dolgova, TV Fedyanin, AA Schuhmacher, D Marowsky, G
Citation
Oa. Aktsipetrov et al., Optical second-harmonic phase spectroscopy of the Si(111)-SiO2 interface, THIN SOL FI, 364(1-2), 2000, pp. 91-94
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
364
Issue
1-2
Year of publication
2000
Pages
91 - 94
Database
ISI
SICI code
0040-6090(20000327)364:1-2<91:OSPSOT>2.0.ZU;2-V
Abstract
The two-photon interband electron transitions in a silicon layer directly u nderneath the Si(111)-SiO2 interface in the vicinity of the E-2 critical po int (CP) are probed by optical second-harmonic (SH) spectroscopy. The combi nation of the SH phase and intensity spectroscopy allows the complete decon volution of the spectral behavior of the amplitude and phase of the quadrat ic susceptibility chi((2)) near the E-2 critical point of silicon. (C) 2000 Elsevier Science S.A. All rights reserved.