Sensitivity of SHG-measurements on oxide deposition process parameters

We present a comparison of SHG-measurements at the Si/SiO2-interface with e lectrical characterization to demonstrate the ability of nonlinear optical methods for the analysis of interfaces. The Si/SiO2-interfaces under invest igation are deposited oxides on Si(001) substrate which were treated in a r apid thermal processing (RTP) chamber. The variation of oxide process param eters, namely the temperature of the post deposition annealing (PDA)-temper ature and cooling rates result in a Variation of the amplitude of the non-l inear optical radiation from the Si/SiO2-interface. Standard electrical cha racterization of identical samples reveal correlated changes in the defect concentration at and near the interface. These results show that the method of SHG may provide a fast and non-destructive characterization- and proces s-control tool for in situ parameter analysis during gate-oxide processing. (C) 2000 Elsevier Science S.A. All rights reserved.