Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV

Authors
Cobet, C Wilmers, K Wethkamp, T Edwards, NV Esser, N Richter, W
Citation
C. Cobet et al., Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV, THIN SOL FI, 364(1-2), 2000, pp. 111-113
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
364
Issue
1-2
Year of publication
2000
Pages
111 - 113
Database
ISI
SICI code
0040-6090(20000327)364:1-2<111:OPOSIB>2.0.ZU;2-Q
Abstract
In this work, we present the dielectric function of hexagonal 4H- and 6H-Si C polytypes as well as the cubic 3C-SiC polytype in the energy range from 3 .5 to 10 eV measured by spectroscopic ellipsometry. We operated with synchr otron radiation at the Berlin electron storage ring BESSY I. Additionally t he samples were investigated by atomic force microscopy to correct the meas ured dielectric function for the influence of surface roughness. The experi mental results are compared to theoretical calculations. (C) 2000 Elsevier Science S.A. All rights reserved.