Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range

Thickness and complex refractive index of each layer in a double hetero str ucture, consisting of InP and InGaAsP, are obtained by spectroscopic ellips ometry. Accuracy is at least 2% in layer thickness and 0.005 in the refract ive index of InP. An equation description of the complex refractive index a llows for flexible description of InP-based materials in the wavelength ran ge of 800-1700 nm. Simultaneous determination of thickness and refractive i ndex by non-destructive ellipsometry in the near infra red (NIR) for the la yers in a double hetero layer stack requires additional information on the properties of these layers (C) 2000 Elsevier Science S.A. All rights reserv ed.