K. Moumanis et al., Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs, THIN SOL FI, 364(1-2), 2000, pp. 249-253
We report a magneto-optical study of record quality MBE grown On,Ga)As/GaAs
samples taking into account the Coulomb well (CW) potential and strain eff
ects. A rich fine structure of heavy and light hole magneto-excitons was ob
served. Additional hole confinement due to its Coulomb attraction to the el
ectron localized in a quantum well (QW) appears to be of key importance for
light-hole excitons in (In,Ga)As/ GaAs QWs. The CW depth for light holes w
as directly experimentally estimated. Heavy hole masses, m(hh), in the firs
t quantum-size subband of the InxGa1-xAs/GaAs heterostructure were estimate
d also. Results agree with theoretically calculated heavy hole mass taking
into account deformation of the InGaAs layer and tunneling of light holes.
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