MeV Al+ and Al-2(+) ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0-3.0 MeV) atomic and molecular Al+ ions in Si(100) to a fluence of 5 x 10(14) Alatoms/cm(2) at room temperature. The molecular effect, i.e. the increase of the displac ement yield compared with the sum of the atomic yields, and the damage form ation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended sec ondary defects which form during thermal anneals of Al+ or Al-2(+) irradiat ed silicon. The samples have been examined using combined Rutherford backsc attering and channeling experiments together with transmission electron mic roscopy observations. The surface structure of the implanted wafers has bee n measured by atomic force microscopy. The results for the implantation-ind uced roughness at the Si surface, resulting from Al+ or Al-2(+) irradiation at the same energy/atom total atomic fluence, flux rate, and irradiation t emperature, are presented and discussed.