InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m

Authors
Joullie, A Skouri, EM Garcia, M Grech, P Wilk, A Christol, P Baranov, AN Behres, A Kluth, J Stein, A Heime, K Heuken, M Rushworth, S Hulicius, E Simecek, T
Citation
A. Joullie et al., InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m, APPL PHYS L, 76(18), 2000, pp. 2499-2501
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
18
Year of publication
2000
Pages
2499 - 2501
Database
ISI
SICI code
0003-6951(20000501)76:18<2499:I"QWLD>2.0.ZU;2-Q
Abstract
Mid-infrared laser diodes with an active region consisting of five "W" InAs Sb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabr icated by metalorganic vapor phase epitaxy on InAs substrates. Laser emissi on was demonstrated at 3.3 mu m up to 135 K from asymmetrical structures ha ving n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 mu m, with a lowest threshold current density of 12 0 A/cm(2) at 90 K, and an output power efficiency of 31 mW/facet/A. The cha racteristic temperature was 35 K. (C) 2000 American Institute of Physics. [ S0003-6951(00)01418-2].