Mid-infrared laser diodes with an active region consisting of five "W" InAs
Sb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabr
icated by metalorganic vapor phase epitaxy on InAs substrates. Laser emissi
on was demonstrated at 3.3 mu m up to 135 K from asymmetrical structures ha
ving n-type InAsPSb and p-type InPSb cladding layers. The devices operated
in pulsed regime at 3.3 mu m, with a lowest threshold current density of 12
0 A/cm(2) at 90 K, and an output power efficiency of 31 mW/facet/A. The cha
racteristic temperature was 35 K. (C) 2000 American Institute of Physics. [
S0003-6951(00)01418-2].