Collective resonance and form factor of homogeneous broadening in semiconductors

Citation
Sv. Zaitsev et al., Collective resonance and form factor of homogeneous broadening in semiconductors, APPL PHYS L, 76(18), 2000, pp. 2514-2516
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
18
Year of publication
2000
Pages
2514 - 2516
Database
ISI
SICI code
0003-6951(20000501)76:18<2514:CRAFFO>2.0.ZU;2-J
Abstract
The superradiance model was recently successfully applied to describe semic onductor quantum well luminescence spectra at low temperature (77 K). In th e present work, we expand and develop this approach for room-temperature sp ectra and compare results with optical autocorrelation data obtained earlie r. Also, the convenience of the superradiance model has been proven for pre cise description of cryogenic spectra of quantum dot heterostructures. Nume rical analysis of quantum dot spectra allows us to conclude that homogeneou s line broadening dominates over inhomogeneous one. (C) 2000 American Insti tute of Physics. [S0003-6951(00)01318-8].