High-resolution scanning capacitance microscopy of silicon devices by surface beveling

High-resolution scanning capacitance measurements were carried out magnifyi ng the sample dimensions by a double beveling method. A magnification of te n times has been reached, but in principle even higher magnifications can b e obtained. For depth magnifications the reverse junction carrier spilling has to be considered. The measurements indicate that the amount of the spil ling effect is in agreement with the models developed to date. The method w as successfully applied directly to silicon devices and it demonstrates tha t accuracy well below tip dimensions can be easily reached. Junction depths as well as channel lengths can be determined with a high resolution. (C) 2 000 American Institute of Physics. [S0003-6951(00)01618-1].