Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

Authors
Ghosh, S Kochman, B Singh, J Bhattacharya, P
Citation
S. Ghosh et al., Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy, APPL PHYS L, 76(18), 2000, pp. 2571-2573
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
18
Year of publication
2000
Pages
2571 - 2573
Database
ISI
SICI code
0003-6951(20000501)76:18<2571:CBOIIS>2.0.ZU;2-E
Abstract
The heterostructure conduction band offset, Delta E-c, in InAs/GaAs self-or ganized quantum dots has been measured by deep level transient spectroscopy . Measurements were made with Au-Al0.18Ga0.82As Schottky diodes in which th e multilayer dots are embedded in the ternary layer. The estimated value of the band offset Delta E-c = 341 +/- 30 meV. (C) 2000 American Institute of Physics. [S0003-6951(00)03618-4].