Field emission from quasi-aligned SiCN nanorods

We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by us ing a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotr on resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for hig h growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal ca talyst. Scanning electron microscopy shows that the SiCN nanorods are six-s ide-rod-shaped single crystals of about 1-1.5 mu m in length and about 20-5 0 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanor od contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Charact eristic current-voltage measurements indicate a low turn-on field of 10 V/m u m. Field emission current density in excess of 4.5 mA/cm(2) has been obse rved at 36.7 V/mu m. Moreover, SiCN nanorods exhibited rather stable emissi on current under constant applied voltage. (C) 2000 American Institute of P hysics. [S0003-6951(00)01117-7].