We report the growth of BaTiO3 thin films by standard Radio Frequency sputt
ering. Without any in situ or post annealing, these polycristalline films a
re oriented relative to the substrate even when it is amorphous. We show th
at this preferential orientation may be monitored using a DC Bias during th
e film growth. At room temperature, cubic films of (100) and (110) orientat
ions have been achieved, on fused silica substrate. Some optical waveguidin
g properties of these films have been studied. The resulting film index is
2.26 and the optical step index at the substrate interface is sharp. This a
llows the use of standard RF sputtering techniques to monitor oriented BaTi
O3 films for linear optical applications.