Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

Authors
Kinsey, GS Hansing, CC Holmes, AL Streetman, BG Campbell, JC Dentai, AG
Citation
Gs. Kinsey et al., Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode, IEEE PHOTON, 12(4), 2000, pp. 416-418
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
4
Year of publication
2000
Pages
416 - 418
Database
ISI
SICI code
1041-1135(200004)12:4<416:WIAP>2.0.ZU;2-H
Abstract
A high-speed waveguide In0.53Ga0.47As-In-0.52 Al0.48As Separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 mu m has been demonstrated. A unity-gain bandwidth of 27 GHz was achie ved with a gain-bandwidth product of 120 GHz.