High mobility thin film transistors fabricated on a plastic substrate at aprocessing temperature of 110 degrees C

We present results from excimer laser processed poly-silicon thin film tran sistors fabricated on a plastic substrate. Except for the temperature rise during excimer laser irradiation for crystallization, the highest processin g temperature that the substrate was subjected to was 110 degrees C. Transi stor field-effect mobility of 250 cm(2)/V.s and sub-threshold swing of 0.16 V/decade were measured in these devices. These are the best characteristic s reported to date for a thin film transistor (TFT) on a plastic substrate. The performance is attributed to our optimized laser crystallization proce ss of helium sputtered Si films, laser-assisted low-temperature doping proc esses, and transient annealing.