We have succeeded in growing single-phase beta-FeSi2 crystals by a temperat
ure gradient solution growth method. FeSi2 solute and Ga solvent were place
d in a quartz ampule, which was evacuated under a high vacuum (< 2 x 10(-6)
Torr) and sealed with a quartz rod. The ampule was heated for 24-144 h in
a gradient temperature profile. The grown crystals had multiple facet plane
s and the color was metallic silver white. X-ray diffraction showed that th
e grown crystals were single-phase beta-FeSi2. The conduction of the beta-F
eSi2 grown crystals was p-type and the resistivity was between 0.05 and 0.2
Omega.cm.