Solution growth of single-phase beta-FeSi2 bulk crystals

Citation
H. Udono et I. Kikuma, Solution growth of single-phase beta-FeSi2 bulk crystals, JPN J A P 2, 39(3AB), 2000, pp. L225-L226
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
3AB
Year of publication
2000
Pages
L225 - L226
Database
ISI
SICI code
Abstract
We have succeeded in growing single-phase beta-FeSi2 crystals by a temperat ure gradient solution growth method. FeSi2 solute and Ga solvent were place d in a quartz ampule, which was evacuated under a high vacuum (< 2 x 10(-6) Torr) and sealed with a quartz rod. The ampule was heated for 24-144 h in a gradient temperature profile. The grown crystals had multiple facet plane s and the color was metallic silver white. X-ray diffraction showed that th e grown crystals were single-phase beta-FeSi2. The conduction of the beta-F eSi2 grown crystals was p-type and the resistivity was between 0.05 and 0.2 Omega.cm.