Coalescence in microchannel epitaxy of InP

We have studied the lateral coalescence in microchannel epitaxy (MCE) of In P by LPE. In the present study, we suggest that there are two modes of the coalescence, "one-zipper" and "two-zipper". New patterns of microchannels w ere designed to realize these two coalescence modes. The coalesced MCE isla nds were chemically etched and it was found that dislocations were usually generated in the coalesced region when the growth was carried out in the "t wo-zipper" mode; however, when the growth occurred in the "one-zipper" mode , dislocations were not found in the coalesced region. It is concluded that by conducting the growth in the "one-zipper" mode, the formation of disloc ations in the coalesced region can be avoided. (C) 2000 Elsevier Science B. V. All rights reserved.