Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3

The doping reaction of P in the P-doped Si growth using Si2H6 and PH3 has b een studied by the observation of the surface P during the growth with ther mal desorption spectroscopy. When the growth temperature is set at 700 degr ees C, the surface P chemistry is strongly dependent upon the PH3 concentra tion in the Si2H6 source. In the lower concentration below 50 ppm, the adso rbed P atoms form Si-P heterodimers, while P adsorbs on the defect site in the higher concentration region. The surface P-coverage has a linear relati on with the doping concentration, which can be calculated by the two-site e xchange model. The reaction scheme of the P-doped Si growth is discussed in the present paper. (C) 2000 Elsevier Science B.V. All rights reserved.