A simple analytical model of an ion-implanted GaAs metal-semiconductor-fiel
d-effect transistor (MESFET) is useful for computer aided design of GaAs de
vices and integrated circuits (IC's) and device parameter acquisition, The
present paper aims at presenting a frequency dependent analytical model of
GaAs optically illuminated field-effect transistor (OPFET) with improved ab
sorption under back illumination. Instead of the conventional front illumin
ation through the source, gate and drain we consider the incident radiation
to enter the device through the substrate. Two cases are considered: one i
n which the fiber is inserted partially into the substrate and the other, i
n which the fiber is inserted upto the active layer-substrate interface. Th
e later case represents improved absorption in the active layer of the devi
ce, The current-voltage characteristics and the transconductance of the dev
ice for different signal modulated frequencies have been evaluated. The fre
quency dependence of internal and external photovoltages and the photocurre
nt have also been calculated and discussed. The results indicate significan
t improvement over published data using front illumination.