This work is devoted to the growing and characterization of perfect C-60 si
ngle crystals with the aim of further understanding of the physical propert
ies of this material related to the low energy excited states which determi
ne in a considerable degree its electronic properties, which, in turn, are
important for its possible application. Here we present several characteriz
ation techniques based on optical properties of C-60 crystals and the first
results of the investigation of the C-60 samples grown at the orbital spac
e station "MIR ".