Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Authors
Yi, HT Cho, J Choi, WJ Woo, DH Kim, SH Kang, KN
Citation
Ht. Yi et al., Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers, J MAT SCI L, 19(10), 2000, pp. 835-836
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
19
Issue
10
Year of publication
2000
Pages
835 - 836
Database
ISI
SICI code
0261-8028(200005)19:10<835:DOQWDO>2.0.ZU;2-O