Temperature dependence piezoreflectance study of the effect of doping MoS2with rhenium

Citation
Kk. Tiong et al., Temperature dependence piezoreflectance study of the effect of doping MoS2with rhenium, J PHYS-COND, 12(14), 2000, pp. 3441-3449
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
14
Year of publication
2000
Pages
3441 - 3449
Database
ISI
SICI code
0953-8984(20000410)12:14<3441:TDPSOT>2.0.ZU;2-L
Abstract
We have recorded piezoreflectance (PzR) spectra at 15 K over the energy ran ge 1.5-2.5 eV for undoped, 0.5% and 1% rhenium-doped (Re-doped) MoS2 single crystals to examine the effect of dopant on the spectral features near the direct band- edge excitonic transitions. More elaborate temperature depend ences of the excitonic features A and B of the Re-doped MoS2 single crystal s in the range 15 to 300 K have also been obtained using PzR. The energies and broadening parameters of the A and B excitons of the Re-doped MoS2 samp les have been determined accurately via a detailed Line shape fit of the Pz R spectra. The parameters that describe the temperature variation of the en ergies and broadening functions of the excitonic transitions are analysed. A plausible suggestion will be put forth to explain the role of rhenium in affecting the variation of the excitonic transitions.