We report on a novel fabrication process and preliminary characterization o
f a nanomechanical resonating device, which is to be used for mass detectio
n. The fabrication of the device is based on laser lithography on Al coated
SiO2/p(++)Si/SiO2/Si structures, followed by dry and wet etching. We have
fabricated highly doped polysilicon free-hanging cantilevers and anchored d
rivers for lateral cantilever vibration, where the motion of the cantilever
is parallel to the substrate. The cantilevers are actuated electrically by
applying an ac voltage between the cantilever and driver. The laterally vi
brating cantilever structures are approximately 30-50 mu m in length, 1.8 m
u m in height, and 500 nm in width. The characterization of the resonators
was performed by direct observation of the cantilever through an optical mi
croscope. An electrical measuring technique is also presented and discussed
. Typical values of resonant frequency and quality factor, at 1 atm, are ap
proximately 500 id-It and 50, respectively. Moreover, a dependence of the r
esonant frequency on the applied de voltage between the cantilever and driv
er has been found. (C) 2000 American Vacuum Society. [S0734-211X(00)08102-6
].