Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Authors
Schaepkens, M Oehrlein, GS Cook, JM
Citation
M. Schaepkens et al., Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas, J VAC SCI B, 18(2), 2000, pp. 848-855
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
848 - 855
Database
ISI
SICI code
1071-1023(200003/04)18:2<848:EORFBP>2.0.ZU;2-L
Abstract
We present and discuss results obtained in studies of the mechanisms underl ying Various feature size dependencies of SiO2 etching in inductively coupl ed fluorocarbon plasmas. The Variation of the fluorocarbon deposition rate and the SiO2 etch rate with both feature size and rf bias power has been me asured in a variety of constant aspect ratio features for both an etch stop (C3F6 /H-2) and a nonetch stop ( CHF3) feedgas chemistry. (C) 2000 America n Vacuum Society. [S0734-211X(00)02902-4].