Calculation of the field emission current density from n-SI through injection in N-doped diamond

A model for electron field injection from the n-silicon conduction band (CB ) into the nitrogen-diamond CB is presented, The model takes into account t he electric field penetration into the silicon base and the disturbance of the electron distribution therein. Allowing for a nonlinear anode voltage d ependence of the field in the diamond film (and thus in vacuum too) a good fit to experimental current density-voltage (J-V) characteristics was obtai ned. The model can also predict the temperature dependence of the emission current in accordance with some existing experimental data. (C) 2000 Americ an Vacuum Society. [S0734-211X(00)06602-6].