Arrays of 10 polysilicon field emitter tips were fabricated using plasma et
ch and oxidized to form sharp tips. Phosphorus doped polysilicon tips emit
at around 10-15 V regardless of the degree of their sharpness. Similarly, i
ntrinsic polysilicon tips emit at around 50 V (at 2 mu m tip to anode spaci
ng). The same turn on voltages have been observed on Hat polysilicon surfac
es. Field emission data of the diode structures revealed a significant diff
erence between phosphorous doped and intrinsic polysilicon tips and flat su
rfaces. The phi(3/2)/beta versus applied voltage was obtained from the tran
sconductance data and was used to compare the performance of the doped and
intrinsic polysilicon tips. A qualitative comparison of phi(3/2)/beta ratio
reveals an increase in the effective work function of the intrinsic polysi
licon device which is related to the field penetration inside the emitting
surfaces. Furthermore, field emission data reveal the conduction limitation
of the intrinsic polysilicon films associated with the single carrier inje
ction mechanism. (C) 2000 American Vacuum Society. [S0734-211X(00)08402-X].