Field emitter array fabricated using focused ion and electron beam inducedreaction

A dual beam system consisting of focused ion and electron beams was used fo r manufacturing of No-gated silicon field emitter arrays. Gate opening was produced either by reactive focused ion beam etching of both the niobium an d the silicon dioxide layer or by physical sputtering of the niobium layer by focused ion beam and subsequent wet etching of the underlying silicon di oxide layer. Platinum tips were deposited into the gate opening using an el ectron beam induced chemical reaction. Prototype devices, which exhibit fie ld emission, were produced successfully. Several process parameters such as ion dose, beam diameter, and etch duration were systematically varied to i dentify the optimum condition for the fabrication of field emitter arrays. (C) 2000 American Vacuum Society. [S0734-211X(00)07102-X].