Ih. Shin et Td. Lee, Effect of nitrogen doping on field emission characteristics of patterned diamond-like carbon films prepared by pulsed laser deposition, J VAC SCI B, 18(2), 2000, pp. 1027-1030
Effect of nitrogen doping on field emission characteristics of patterned di
amond-like carbon (DLC) films was studied. The patterned DLC films were fab
ricated by the method reported previously [I. H. Shin and T. D. Lee, J. Vac
. Sci. Technol. B 17, 690 (1999)]. Nitrogen doping in the DLC film was carr
ied out by introducing N-2 gas into the vacuum chamber during deposition. L
evel of doping was controlled by varying N-2 flow rate up to 50 seem. Nitro
gen content in the films almost linearly increased with increasing N-2 flow
rate. Higher emission current density of 0.3-0.4 mA/cm(2) was observed for
the films with 6 at. % N than the undoped films, but the emission current
density decreased with further increase of N contents. Some changes in CN b
onding characteristics with increasing N contents were observed. The CN bon
ding characteristics which seem to affect the electron emission properties
of these films were studied by Raman spectroscopy, x-ray photoemission spec
troscopy and Fourier transform infrared spectroscopy. Electrical resistivit
y and optical band gap measurements showed consistence with the above analy
sis. (C) 2000 American Vacuum Society. [S0734-211X(00)04902-7].