Nonstructured diamond film on etched silicon and its field emission behavior

Authors
Xu, NS Chen, J Feng, YT Deng, SZ
Citation
Ns. Xu et al., Nonstructured diamond film on etched silicon and its field emission behavior, J VAC SCI B, 18(2), 2000, pp. 1048-1050
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
2
Year of publication
2000
Pages
1048 - 1050
Database
ISI
SICI code
1071-1023(200003/04)18:2<1048:NDFOES>2.0.ZU;2-L
Abstract
Nanostructured diamond films were deposited on the etched silicon wafer by using dielectrophoresis method. The properties of the film were analyzed us ing scanning electron microscopy and micro-Raman spectrometry. Their field emission behavior was studied using an anode probe technique. A current den sity of 5 mA/cm(2) was recorded at a field of 3.56 MV/m. This effect is att ributed to the field enhancement at the rough silicon-diamond interface and the lower or even negative electron affinity of the diamond surface. (C) 2 000 American Vacuum Society. [S0734-211X(00)09402-6].