T. Matsukawa et al., Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate, J VAC SCI B, 18(2), 2000, pp. 1111-1114
Field emission characteristics from n- and p-type silicon gated emitter tip
s have been investigated in detail by means of experiments and theoretical
estimation of band bending induced by surface states. Single-tip emitters h
ave been fabricated from n- and p-type silicon and their current-voltage ch
aracteristics have been evaluated. The field emission from the p-type emitt
er has been found to occur at a lower extraction voltage than that of the n
-type emitter. As the theoretical approach to the origin of the phenomena,
potential distribution in the emitter tips has been calculated by using a d
evice simulation technique. The surface states of the n-type emitter tip ar
e negatively charged and form a potential barrier against the electrons. On
the contrary, there is no potential barrier in the p-type tips. The potent
ial barrier in the n-type tip prevents electrons from reaching the tip apex
. This is the reason why the emission current of the n-type emitter was sup
pressed lower than that of the p-type emitter. (C) 2000 American Vacuum Soc
iety. [S0734-211X(00)04202-5].