A new procedure for the extraction of a multibias linear model for MESFETsand HEMTs

Authors
Di Martino, A Dutisseuil, E Ladner, C Pisa, S Tommasino, P Trifiletti, A
Citation
A. Di Martino et al., A new procedure for the extraction of a multibias linear model for MESFETsand HEMTs, MICROW OPT, 25(4), 2000, pp. 263-266
Citations number
15
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
25
Issue
4
Year of publication
2000
Pages
263 - 266
Database
ISI
SICI code
0895-2477(20000520)25:4<263:ANPFTE>2.0.ZU;2-Z
Abstract
Criteria to obtain an accurate multiple-bias liner model for MESFET and HEM T devices ae proposed. Based on these criteria, an automatic extraction pro cedure to identify model parameters has been developed. The extraction proc edure has been successfully checked on HEMT devices in GaAs and InP technol ogies up to 50 GHz. (C) 2000 John Wiley & Sons, Inc.