A new accurate model for drain-gate avalanche current source of GaAs MESFET

Authors
Xiao, Q Ooi, BL Ma, J
Citation
Q. Xiao et al., A new accurate model for drain-gate avalanche current source of GaAs MESFET, MICROW OPT, 25(4), 2000, pp. 269-271
Citations number
6
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
25
Issue
4
Year of publication
2000
Pages
269 - 271
Database
ISI
SICI code
0895-2477(20000520)25:4<269:ANAMFD>2.0.ZU;2-3
Abstract
A new drain-gate avalanche current source model, which is controlled by V-d s and V-gs is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement,and the model is extracted. Compared with several conventio nal models, the proposed model is found to be more accurate than the Curtic e and Fujii model. (C) 2000 John Wiley & Sons, Inc.