DIFFERENT LOCATION OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN N-TYPE POROUS SILICON

Authors
BABANOV YE BUCHIN EY PROKAZNIKOV AV SVETOVOY VB
Citation
Ye. Babanov et al., DIFFERENT LOCATION OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN N-TYPE POROUS SILICON, Physica status solidi. a, Applied research, 161(1), 1997, pp. 1-2
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
161
Issue
1
Year of publication
1997
Pages
1 - 2
Database
ISI
SICI code
0031-8965(1997)161:1<1:DLOPAE>2.0.ZU;2-2