STUDY OF NIOBIUM NITRIDE FILMS PRODUCED BY DC REACTIVE MAGNETRON SPUTTERING

Niobium nitride films were prepared onto unheated GaAs and SiO2 substr ates by de reactive magnetron sputtering from a niobium metal target i n an Ar + N-2 mixed atmosphere. During deposition, the nitrogen conten t in the gas mixture was varied from 0 to 20%. The effects of the diff erent nitrogen content and high-temperature annealing (with annealing temperatures ranging from 850 to 950 degrees C) on the composition, st ructural and electrical properties of the films were studied using Aug er electron spectroscopy (AES), X-ray diffraction (XRD), transmission electron microscopy (TEM) and resistivity measurement. The correlation s between technological parameters and film properties, structure and composition were established.