Bs. Sokolovskii, ON THE PHOTOELECTRIC PROPERTIES OF THIN GRADED-BAND-GAP SEMICONDUCTORLAYERS, Physica status solidi. a, Applied research, 161(1), 1997, pp. 105-110
The paper theoretically examines the photoelectric properties of thin
homogeneously doped graded band-gap semiconductor layers with constant
band-gap gradient subjected to illumination by strongly absorbed mono
chromatic light from their wide gap side. It is shown that due to the
presence of the photovoltage as a result of the superposition of the D
ember and gap-gradient effects the sign-reversal points depend on the
generation profile. The influence of the surface recombination velocit
ies of photocarriers on the photoconductivity of thin graded-band-gap
layers is analysed.