ON THE PHOTOELECTRIC PROPERTIES OF THIN GRADED-BAND-GAP SEMICONDUCTORLAYERS

The paper theoretically examines the photoelectric properties of thin homogeneously doped graded band-gap semiconductor layers with constant band-gap gradient subjected to illumination by strongly absorbed mono chromatic light from their wide gap side. It is shown that due to the presence of the photovoltage as a result of the superposition of the D ember and gap-gradient effects the sign-reversal points depend on the generation profile. The influence of the surface recombination velocit ies of photocarriers on the photoconductivity of thin graded-band-gap layers is analysed.