CHARACTERIZATION OF THE INTERFACE STATES BETWEEN AMORPHOUS DIAMOND-LIKE CARBON-FILMS AND (100)-SILICON

Authors
KONOFAOS N MCCLEAN IP THOMAS CB
Citation
N. Konofaos et al., CHARACTERIZATION OF THE INTERFACE STATES BETWEEN AMORPHOUS DIAMOND-LIKE CARBON-FILMS AND (100)-SILICON, Physica status solidi. a, Applied research, 161(1), 1997, pp. 111-123
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
161
Issue
1
Year of publication
1997
Pages
111 - 123
Database
ISI
SICI code
0031-8965(1997)161:1<111:COTISB>2.0.ZU;2-Y
Abstract
Amorphous diamond-like carbon films were grown onto (100) Si substrate s using rf plasma CVD of methane. Then the interface states were exami ned using the conductance technique. Metal-insulator-semiconductor (MI S) devices were made and proper modeling was used. The statistical mod el was used to fit the experimental data and calculate the density of interface states. The technique revealed a density of interface states between 10(11) and 10(12) eV(-1) cm(-2). Subsequent thermal annealing reduced this density.