Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces

Twist-bonded Si/Si (0 0 1) and Si/SiO2 interfaces have been investigated by grazing incidence X-ray scattering methods. For Si/Si (0 0 1) bonding, con ventional X-ray reflectivity reveals the good quality of the interfaces in terms of flatness and roughness. in-plane grazing incidence diffraction mea surements around the (2 2 0) reflection show satellite peaks close to the s ubstrate and the layer diffraction peaks. These sharp satellites are produc ed by a periodic displacement resulting from a very regular buried dislocat ion network. The Si/SiO2 bonding has been studied with X-ray reflectivity w ithin a transmission geometry. The analysis of the data shows the high qual ity of both bonded Si/SiO2 and thermal oxide SiO2/Si interfaces. (C) 2000 E lsevier Science B.V. All rights reserved.