Oxidation of Nb(110) thin films on a-plane sapphire substrates: an X-ray study

Citation
O. Hellwig et H. Zabel, Oxidation of Nb(110) thin films on a-plane sapphire substrates: an X-ray study, PHYSICA B, 283(1-3), 2000, pp. 228-231
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
283
Issue
1-3
Year of publication
2000
Pages
228 - 231
Database
ISI
SICI code
0921-4526(200006)283:1-3<228:OONTFO>2.0.ZU;2-V
Abstract
We studied the oxidation of Nb(1 1 0) thin films on a-plane sapphire substr ates at elevated temperatures with X-ray scattering techniques. Comparing a tmospheric versus dry oxidation, we observe a different behaviour resulting in the formation of chemically and structurally different oxides. Under at mospheric conditions ae obtain an unlimited growth 1 of an amorphous Nb2O5 layer, while dry oxidation results ir 1 the growth of a crystalline and pas sivating NbO(1 1 1) layer with a final thickness of about 50 Angstrom. In a ddition atmospherically oxidised samples show the formation of an oxygen la ttice gas in the remaining Nb(1 1 0) film, which is not observed after dry oxidation. (C) 2000 Elsevier Science B.V. All rights reserved.