Resistivity minimum and anisotropy in R2PdSi3 (R = Ce, Gd)

Citation
Sr. Saha et al., Resistivity minimum and anisotropy in R2PdSi3 (R = Ce, Gd), PHYSICA B, 281, 2000, pp. 116-117
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
281
Year of publication
2000
Pages
116 - 117
Database
ISI
SICI code
0921-4526(200006)281:<116:RMAAIR>2.0.ZU;2-J
Abstract
We have measured electrical resistivity (rho) and magnetization (M) on the single crystal R2PdSi3 (R = Ce,Gd). A minimum in rho in each compound repor ted earlier in polycrystals is observed also in single crystals. The rho mi nima in two compounds are apparently of different origins. Both compounds e xhibit large anisotropy, though Gd is a S-state ion. M in Ce2PdSi3 is highl y anisotropic with the orientation of the applied magnetic: fields due to c rystal field (CEF), while M in Gd2PdSi3, shows two step metamagnetic anomal ies for the magnetic field along [0001]. (C) 2000 Elsevier Science B.V. All rights reserved.