Anisotropic transport properties in RTe2 (R : La, Ce, Pr, Sm and Gd)

Authors
Citation
Ys. Kwon et Bh. Min, Anisotropic transport properties in RTe2 (R : La, Ce, Pr, Sm and Gd), PHYSICA B, 281, 2000, pp. 120-121
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
281
Year of publication
2000
Pages
120 - 121
Database
ISI
SICI code
0921-4526(200006)281:<120:ATPIR(>2.0.ZU;2-H
Abstract
The temperature dependence of electrical resistivity was measured in the si ngle crystals of LaTe2 (#5, #6), CeTe2 (#2, #5). PrTe2, GdTe2 and polycryst alline SmTe2 for I//ab-plane and I//c -axis. It shows a strong anisotropy. In stoichiometric CeTe2, especially, the metal-insulator transition is obse rved at about 150 K and the anomalies due to the competition between the ca rrier concentrations and the scattering rate are also found at 5.8 and 3 K. (C) 2000 Elsevier Science B.V. All rights reserved.