Hall effect in the doped Kondo insulator (Ce1-xLax)(3)Bi4Pt3

Single crystals of (Ce1-xLax)(3)Bi4Pt3 have been grown by using a nux grow technique. The Hall effect measured between T = 1.5 and 80 K in B = +/- 5 T indicates that the carriers are electron-like with a concentration n incre asing from n = 8.5 x 10(20) cm(-3) for x = 0 to 5.6 x 10(21) cm(-3) for x = 1. The T and I dependences of the electrical resistivity, Hall effect and mobility of the carriers suggest that the critical La concentration for the metal-insulator transition is less than x = 0.006. where an impurity band at the Fermi energy is already formed by La doping. (C) 2000 Elsevier Scien ce B.V. All rights reserved.